A 3.5 GHz Low-Noise Amplifier in 0.35 μm GaN HEMT on Si-Substrate for WiMAX Applications

This paper presents an 3.5 GHz low noise amplifier that uses a two-stage configuration, using 0.35 m AlGaN/GaN HEMT on silicon substrate technology. The first stage has a cascode topology to achieve high gain, better stability and well reverse isolation. The second stage has a RC-feedback topology for wideband matching. The Tmatching network is used for broadband output matching. The results show a maximum gain of 14.4 dB, a minimum noise figure of 3.3 dB, and an input/output return loss greater than 10 dB. With good power-handling capabilities of GaN HEMT devices, the third-order input intercept point at 3.5 GHz is +2.5 dBm and the unit consumes 170 mW of power. Good agreement between the simulated and measured results is found.